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      磁性非易失MRAM
      主頁 ? 產品中心 ? 磁性非易失MRAM ? ES1GB-N03 ?
      磁性隨機存儲器芯片(MRAM)磁性隨機存儲器芯片(MRAM)

      一種非揮發性的磁性隨機存儲器。
      它擁有靜態隨機存儲器(SRAM)的高速讀取寫入能力,
      以及動態隨機存儲器(DRAM)的高集成度,而且基本上可以無限次地重復寫入
      Everspin MRAM其原理是利用電子自旋的磁性結構,來提供不會產生損耗的非揮發特性。
      Everspin MRAM可在集成了硅電路的磁性材料中存儲信息,以在單一、可無限使用的組件中提供SRAM的速度以及閃存的非揮發特性。

      ES1GB-N03 nvNITRO™ PCIe HHHL Accelerator Card
       

      The ES1GB-N03 nvNITRO™ Accelerator Card is a PCIe HHHL card based on Everspin’s STT-MRAM products and an NVMe protocol that delivers greater than 1.5 Million random write, write/read or read IOPS with 6μs latency.  It supports full data integrity on a power failure and virtually unlimited endurance using Everspin nvNITRO™ Accelerators.
       

      Highlights Applications ES1GB-N03
      •  1GB storage capacity •  Power Fail Safe Data & Metadata Cache/Buffer
      •  PCIe Gen3 x8, half-height, low profile card •  Burst Data Deserializer
      •  NVMe 1.1+ in block mode •  Database and Application Accelerators
      •  Memory mapped IO (MMIO) in byte mode •  Storage Accelerator For All Flash Storage
      •  Ultra-low access latency (as low as 2μS) Array (FSA)
      •  Consistent latency (short tail) •  File System Accelerator (Parallel & Serial)
      •  Customer-defined features using own RTL •  Power Fail Safe Software Defined Storage
      with programmable FPGA •  Power Fail Safe Software and NVMe RAID
      •  General purpose accelerator development •  OLTP Log Cache Acceleration
      platform with programmable onboard FPGA, •  Storage Fabric (Network) Accelerators
      Network SERDES, SATA, SODIMM etc. •  Shared Remote Persistent Memory
      •  Development license for NVMe core IP  
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