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      磁性非易失MRAM
      主頁 ? 產品中心 ? 磁性非易失MRAM ? ES1GB-U201 ?
      磁性隨機存儲器芯片(MRAM)磁性隨機存儲器芯片(MRAM)

      一種非揮發性的磁性隨機存儲器。
      它擁有靜態隨機存儲器(SRAM)的高速讀取寫入能力,
      以及動態隨機存儲器(DRAM)的高集成度,而且基本上可以無限次地重復寫入
      Everspin MRAM其原理是利用電子自旋的磁性結構,來提供不會產生損耗的非揮發特性。
      Everspin MRAM可在集成了硅電路的磁性材料中存儲信息,以在單一、可無限使用的組件中提供SRAM的速度以及閃存的非揮發特性。

      ES1GB-U201 U.2 Accelerator
       

      The ES1GB-U201 is a U.2 form factor NVMe card based on Everspin’s STT-MRAM products and Simultaneous Block mode (NVMe) and Byte Mode (PCIe Direct Memory Access). They offer extremely low and predictable latency and are power fail safe without system support requirements.

      Highlights Applications ES1GB-U201
      •  1GB Storage Capacity •  Power Fail Safe Data & Metadata Cache/Buffer
      •  PCIe Gen3 x4 •  Burst Data Deserializer
      •  U.2 2.5” form factor •  Database and Application Accelerators
      •  NVMe 1.1+ in block mode •  Storage Accelerator For All Flash Storage
      •  Memory mapped IO (MMIO) in byte mode     Array (FSA)
      •  Ultra-low access latency (uS) •  File System Accelerator (Parallel & Serial)
      •  Consistent latency (short tail) •  Power Fail Safe Software Defined Storage
      •  Customer defined features using own RTL •  Power Fail Safe Software And NVMe RAID
         with programmable FPGA •  OLTP Log Cache Acceleration
      •  Development license for NVMe core IP •  Storage Fabric (Network) Accelerators
        •  Shared Remote Persistent Memory
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